High efficiency microwave power amplifier based on AlGaN/GaN

摘要

In the paper, a design procedure for synthesis of microwave power amplifiers based on a AlGaN/GaN technology is discussed. The paper is focused on the design of harmonic impedance matching network in order to increase power amplifier efficiency. As a result, the power amplifier based on AlGaN/GaN heterojunction HEMT transistor with 0.25×125 μm gate capable for 30 W output power operation and providing 34 % power added efficiency at 9 GHz has been designed, fabricated and measured.