机译:高效AlGaN / GaN X波段功率放大器的器件和设计优化
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany;
Institut Für Hochfrequenztechnik und Elektronik (IHE), Universit?t Karlsruhe (TH), Kaiserstr. 12, 76128 Karlsruhe, Germany;
Amplifiers; HEMTs; Gallium compounds; Power amplifiers; Microstrip; MMICs;
机译:原位钝化与GaN缓冲优化相结合,可在Si(111)上的Si_3N_4 / AlGaN / GaN HEMT器件中实现极低的电流分散和极低的栅极泄漏
机译:基于材料和物理尺寸的梯度Algan / GaN HEMT器件性能设计优化
机译:用于GaN基光电器件的双AlGaN / GaN分布式布拉格反射器堆叠镜的设计与制造
机译:AlGaN厚度和成分不同的GaN / AlGaN / GaN异质结构器件的静水压研究
机译:研究常关模式的AlGaN / GaN MOS HEMT器件,该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
机译:Algan / GaN在没有GaN缓冲层的SIC器件上:电气和噪声特性
机译:基于材料和物理尺寸的梯度Algan / GaN HEMT器件性能设计优化