Nonlinear thermal stress/strain analyses of copper filled TSV (through silicon via) and their flip-chip microbumps

机译：铜填充TSV（通过硅过孔）及其倒装芯片微凸块的非线性热应力/应变分析

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Most of TSVs are filled with the copper, even siliconpoly and tungsten are the alternatives. The coefficient of thermal expansion (CTE) of copper (~17.5x10 /degC). Thus, wh

机译：大多数TSV都填充有铜，甚至可以选择硅多晶硅和钨。铜的热膨胀系数（CTE）（〜17.5x10 / degC）。因此，

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来源
《Power Semiconductor Devices amp; IC's, 2005 IEEE International Symposium on; Lake Buena Vista,FL,USA》||P.1073-1081|共9页
会议地点 Lake Buena VistaFLUSA
作者
Selvanayagam; C.S.; Lau; J.H.; Xiaowu Zhang; Seah; S.K.W.; Vaidyanathan; K.; Chai; T.C.;
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原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
copper; delamination; flip-chip devices; integrated circuit packaging; silicon; stress analysis; thermal analysis; thermal expansion; thermal management (packaging); Moore''s law; aspect ratios; copper filled TSV; delamination; flip-chip microbumps; nonlinear strains;

机译：铜;分层;倒装芯片器件;集成电路封装;硅;应力分析;热分析;热膨胀;热管理（包装）;摩尔定律;纵横比;铜填充的硅通孔;分层;倒装芯片微凸点;非线性应变;

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专利

1. Nonlinear Thermal Stress/Strain Analyses of Copper Filled TSV (Through Silicon Via) and Their Flip-Chip Microbumps [J] . Selvanayagam C. S., Lau J. H., Zhang X., Advanced Packaging, IEEE Transactions on . 2009,第4期

机译：铜填充TSV（通过硅过孔）及其倒装芯片微凸块的非线性热应力/应变分析
2. The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via) [J] . M. H. Liao, M.-Y. Yu, G.-H. Liu, AIP Advances . 2013,第8期

机译：填充铜的热硅通孔（通过硅过孔）引起的应变场的非线性解析模型的演示
3. Strain and tilt mapping in silicon around copper filled TSVs using advanced X-ray nano-diffraction [J] . Vianne B., Escoubas S., Richard M. -I., Microelectronic Engineering . 2015,第apra期

机译：使用先进的X射线纳米衍射技术，在硅填充铜硅通孔周围的硅中进行应变和倾斜映射
4. Nonlinear thermal stress/strain analyses of copper filled TSV (through silicon via) and their flip-chip microbumps [C] . Selvanayagam C.S., Lau J.H., Xiaowu Zhang, Electronic Components and Technology Conference . 2008

机译：铜填充TSV（通过硅通孔）的非线性热应力/应变分析及其倒装片Microbumps
5. Analytical Characterization of Electrolyte and Additives for High Quality Copper Plating of Through Silicon Vias (TSVs) [D] . Wu, Hailong. 2013

机译：硅通孔（TSV）的高质量镀铜的电解质和添加剂的分析特性
6. Effect of Pulse Current and Pre-annealing on Thermal Extrusion of Cu in Through-Silicon via (TSV) [O] . Youjung Kim, Sanghyun Jin, Kimoon Park, 2020

机译：脉冲电流和预退火对通过硅通孔（TSV）铜热挤出的影响
7. The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via) [O] . M. H. Liao, M.-Y. Yu, G.-H. Liu, 2013

机译：填充铜的热硅通孔（通过硅通孔）引起的应变场的非线性解析模型的证明
8. Application of Stress-Strain Relations in Nonlinear Ground-Motion Analyses. [R] . chen,albert t. f. 1977

机译：应力 - 应变关系在非线性地震动分析中的应用。

Nonlinear thermal stress/strain analyses of copper filled TSV (through silicon via) and their flip-chip microbumps

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