New Generation Power MOSFETs and Safe Operating Area

摘要

Because of the recent advances in silicon processing and the control of FAB operations, new generation Power MOSFETs have distinct advantages over older silicon technologies. This has resulted in power devices that are able to achieve lower On-resistance, Rds(on), as well as lower Gate charge performance when compared with older technologies. However, like all facets of the electronics industry, there are tradeoffs. One of the most significant tradeoffs resides in the performance of Safe Operating Area, SOA. This paper presents issues critical to the Power MOSFET's Safe Operating Area performance and shows that the correct selection of a power device can be critical for many applications.