Analysis of pulsed I-V curves and power slump in field-plate GaN-based FETs

机译：场板GaN基FET的脉冲I-V曲线和功率损耗分析

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Two-dimensional transient analyses of GaN MESFETs and AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a buffer layer, and pulsed I-V curves are derived from them. It is studied how the existence of field plate aff

机译：对GaN MESFET和AlGaN / GaN HEMT进行了二维瞬态分析，其中在缓冲层中考虑了深施主和深受主，并从中得出了脉冲I-V曲线。研究了场板的存在

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《Plasma Science, IEEE Conference Record - Abstracts 2006 IEEE International Conference on》|2008年|P.893-896|共4页
会议地点 Nanjing,China
作者
Horio; K.; Itagaki; K.; Nakajima; A.;
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III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; buffer layers; gallium compounds; high electron mobility transistors; wide band gap semiconductors; 2D transient analyses; AlGaN-GaN; AlGaN/GaN HEMT; GaN FET; GaN MESFET; I-V curves; b;

机译：III-V半导体；肖特基栅极场效应晶体管；铝化合物缓冲层；镓化合物高电子迁移率晶体管；宽带隙半导体；二维瞬态分析； AlGaN-GaN; AlGaN / GaN HEMT； GaN FET; GaN MESFET; I-V曲线； b;

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专利

1. Two-Dimensional Analysis of Field-Plate Effects on Surface-State-Related Current Transients and Power Slump in GaAs FETs [J] . Horio K.Tanaka T.Itagaki K.Nakajima A. Electron Devices, IEEE Transactions on . 2011,第3期

机译：GaAs FET中场板对与表面状态相关的电流瞬变和功率损耗的影响的二维分析
2. MODELING THE I-V CHARACTERISTICS OF THE POWER MICROWAVE FETs WITH THE ANGELOV MODEL USING PULSE MEASUREMENTS [J] . J. R. Loo-Yau, J. A. Reynoso-Hernandez, J. E. Zuniga, Microwave and optical technology letters . 2006,第6期

机译：使用脉冲测量以Angelov模型对功率微波FET的I-V特性建模
3. Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET [J] . Kobayashi Kenya, Sudo Masaki, Omura Ichiro Japanese journal of applied physics . 2018,第4S期

机译：最新高性能高性能斜场板沟槽MOSFET的基于结构的电容建模和功率损耗分析
4. Analysis of pulsed I-V curves and power slump in field-plate GaN-based FETs [C] . Horio K., Itagaki K., Nakajima A. International Conference on Microwave and Millimeter Wave Technology . 2008

机译：脉冲I-V曲线曲线和功率坍塌分析在基于焊接甘油的FET中
5. THE I-V CURVES OF SUPERCONDUCTING MICROCONSTRICTIONS. [D] . BLONDER, GREG E. 1982

机译：超导微结构的IV曲线。
6. Accurate extraction of WSe2 FETs parameters by using pulsed I-V method at various temperatures [O] . Sung Tae Lee, In Tak Cho, Won Mook Kang, 2016

机译：通过在不同温度下使用脉冲I-V方法准确提取WSe2 FET参数
7. Analysis of buffer-trapping effects on current reduction and pulsed I-V curves of GaN FETs [O] . Takayanagi H., Nakano H., Horio K. 2005

机译：缓冲俘获对GaN FET的电流减小和脉冲I-V曲线的影响分析

Analysis of pulsed I-V curves and power slump in field-plate GaN-based FETs

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