Defect structure of zinc doped silicon studied by X-ray diffuse scattering method

摘要

The results of investigation of microdefects (MDs) in Zn doped n-type Si by X-ray diffuse scattering (XRDS) method are presented. Experimental samples were made by a high-temperature diffusion annealing of Zn with subsequent quenching and tempering. The crystal lattice of the samples is found to contain spherical MDs of vacancy type and plane shape MDs of interstitial type with average radius about 0,1 and 2 urn. The MDs average radius and their type depend on Zn doping level and thermal treatment after compensation diffusion.