PROTON DOPED ZINC OXIDE NANOSTRUCTURES, SEMI-CONDUCTOR NANO DEVICES USING THE SAME AND MANUFACTURING METHOD OF PROTON DOPED ZINC OXIDE NANOSTRUCTURES

摘要

The present invention is an ion implantation (Ion Implantation) uniformly doped with proton proton implanted (Proton) through the zinc oxide nanostructures , the present invention relates to a method for manufacturing a semiconductor nano- elements and the proton -doped zinc oxide nano- structure using the same. To this end in particular , at least one of the zinc oxide crystal is grown nanostructures arranged in the vertical direction ; And at least one of zinc oxide nanostructures , the beam irradiation with an energy of 0.1 keV ~ 1 MeV 10 ¹¹ particles / cm ^{2 ~ 10 18 particles / cm 2 of particles injected into the proton density ; proton- doped zinc oxide nanostructures is disclosed that includes a ;}