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THE INTERCONNECT DESIGN AND ANALYSIS OF RAMBUS MEMORY CHANNEL

机译:RAMBUS存储器通道的互连设计与分析

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摘要

This paper describes the interconnect design, modeling, and analysis of the Direct Rambus?memory channel. A brief introduction of the Rambus channel architecture along with several design issues are presented. Due to the high bandwidth of Rambus channel, it is crucial to accurately model the frequency-varying nature of transmission lines. In the past, the interconnect extraction often involved many test structures and vector network analyzer (VNA) measurements. This paper presents a new approach that models an arbitrary structure by coupled transmission lines in cascade, and optimizes all RLGC matrices for the measured S parameters using only one short-circuit measurement. It is noted that a complex package, often modeled by many lumped elements, could be represented by a simple transmission line. The simulated waveforms were shown to correlate well with time-domain reflectometer (TDR) and scope measurements. Thousands of READ and WRITE simulations were performed using various patterns, configurations, and corner models to ensure a robust design with ample voltage and timing margins.
机译:本文介绍了Direct Rambus内存通道的互连设计,建模和分析。介绍了Rambus通道架构的简要介绍以及一些设计问题。由于Rambus通道的高带宽,准确建模传输线的频率变化特性至关重要。过去,互连提取经常涉及许多测试结构和矢量网络分析仪(VNA)测量。本文提出了一种新方法,该方法通过级联耦合的传输线对任意结构进行建模,并仅使用一个短路测量就所测得的S参数优化所有RLGC矩阵。应当指出,通常由许多集总元件建模的复杂封装可以由一条简单的传输线来表示。所显示的仿真波形与时域反射仪(TDR)和示波器测量值具有很好的相关性。使用各种模式,配置和转角模型执行了数千次READ和WRITE仿真,以确保具有足够电压和时序裕量的稳健设计。

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