Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, P. R. China;
Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, P. R. China;
Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, P. R. China;
AlGaAs/GaAs photocathode; quantum efficiency formula; cathode thickness; interface recombination velocity;
机译:金属有机化学气相沉积法生长指数掺杂AlGaAs / GaAs光电阴极的高量子效率
机译:扩展蓝色透射模GaAlAs / GaAs光电阴极的量子效率公式研究
机译:AlGaAs / GaAs / AlGaAs双异质结构的超高自发发射量子效率,内部99.7%,外部72%
机译:半填充AlGaAs / GaAs二维电子系统中的量子输运
机译:掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
机译:使用GaAs-AlGaAs超晶格的高极化和高量子效率光电阴极