Ultra-high Spontaneous Emission Quantum Efficiency, 99.7 Internally And 72 Externally, From AlGaAs/GaAs/AlGaAs Double Heterostructures

摘要

Thin film (5000/spl Aring),AlGa.As/GaAs/AlGaAs double heterostructures, are floated off their substrates by the epitaxial liftoff technique and mounted on various high reflectivity surfaces. From the absolute photoluminescence intensity, we measure internal and external quantum efficiencies of 99.7% and 72%, respectively. This novel configuration, as well as its world record spontaneous emission quantum efficiency, is expected to play a significant role in the fields of photon number squeezed light, diode lasers, single mode light-emitting-diodes, and solar cells.