Design and fabrication of InGaAsP/InP waveguide modulators for microwave a

摘要

Abstract: InGaAs/InP multiple quantum well electroabsorption modulators grown by MOCVD are designed and fabricated for 1.5 $mu@m wavelength operation. For rib loaded waveguide modulators fabricated on n-InP substrate with a 3 $mu@m rib width and a 2 $mu@m intrinsic waveguide layer, a capacitance of 0.2 to 0.3 pF and a reverse breakdown voltage $GRT 20 V are obtained. The extinction ratio of the modulators is more than 14 dB and the 3 dB optical bandwidth is 18 GHz. The modulator's RF efficiency and optical insertion loss still need to be improved. For modulators made on semi-insulating InP substrate, a capacitance in the range 0.1 to 0.2 pF is measured.!3