Low-frequency Noise Measurements used for semiconductors light active devices

摘要

Three different sets of semiconductors light active devices were by low frequency noise diagnostic described. In the first set the low frequency noise of 2.3 μm CW GaSb based Laser Diodes was measured, in set Ⅱ the noise characteristic of forward biased silicon monocrystalline solar cells were measured and in set Ⅲ the noise characteristic of forward biased Si:H amorphous solar cells were measured. The results of noise measurement in all systems were compared.