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Noise behaviour of a PNP- and NPN-type SiGe HBT, a simulation study

机译:PNP和NPN型SiGe HBT的噪声行为,模拟研究

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摘要

The noise performance of PNP and NPN SiGe structures is examined by an experimentally verified hydrodynamic (HD) noise model. This model is a hierarchical numerical noise model because all noise parameters required by this model are generated by full band Monte Carlo bulk simulations leading to the methodology of the hierarchical numerical noise simulation. The hierarchical HD noise model is applied to compare the performance of NPN and PNP SiGe HBTs. The simulations include AC, DC and noise characteristics like the minimum noise figure. A similar noise performance for both types of devices is found.
机译:通过实验验证的水动力(HD)噪声模型检查了PNP和NPN SiGe结构的噪声性能。该模型是分层数值噪声模型,因为该模型所需的所有噪声参数都是通过全频带蒙特卡洛体模拟生成的,从而产生了分层数值噪声模拟的方法。应用分层高清噪声模型来比较NPN和PNP SiGe HBT的性能。仿真包括交流,直流和噪声特性,例如最小噪声系数。两种类型的设备都具有相似的噪声性能。

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