Cathodoluminescence characterization of InGaN/GaN QW pyramidal structure by Monte Carlo method

摘要

The aim of this paper is to present the quantitative study of cathodoluminescence from InGaN/GaN single quantum wells grown on the GaN pyramid facets. Monte Carlo method has been used to investigate the generation, diffusion and recombination of minority carriers inside the structure under focused electron beam. The influence of various carrier diffusion lengths in top GaN layer and buffer GaN on the depth distributions of recombination and the contribution of individual layers to the cathodoluminescence in dependence on the thickness of the top GaN layer have been determined. The possibility to determine the position of the quantum well within the structure using cathodoluminescence analysis has been discussed.