TEM和CL准原位表征GaN单根纳米线中WZ/ZB结构及其发光特性

摘要

The wurtzite/zinc-blende heterostructures universally exist in one dimensional Ⅲ-V semiconductors. Based on the quasi-m-situ characterization of individual GaN nanowires by cathodoluminescence coupled with TEM, the correlation between the structural and optical properties has been figured out. The cathodoluminescence spectra of wurtzite/zinc-blende nonperiodic superlattices exhibit blue-shift in comparison with nearly 100% wurtzite GaN. The appreciably larger band-gap is probably attributed to the quantum confined effect of the ultra-high density of wurtzite/zinc-blende regions.%纤锌矿(WZ)/闪锌矿(ZB)结构以及WZ/ZB超结构广泛存在于一维Ⅲ-Ⅴ族半导体材料中.本文采用TEM和CL(阴极荧光谱)准原位表征的方法,对GaN纳米线的各种结构进行了系统的表征,并且建立了材料纳米结构与对应发光性质之间的直接联系.研究发现相对于纯WZ结构的GaN单根纳米线,具有WZ/ZB结构纳米线的CL出现了蓝移.通过对CL发光谱的蓝移现象的分析和研究表明,蓝移是由于高密度的WZ/ZB结构单元及其各种超结构所引起的特殊效应.