QUANTUM WIRES AND QUANTUM DOTS FOR OPTOELECTRONICS: RECENT ADVANCES WITH EPITAXIAL GROWTH ON NONPLANAR SUBSTRATES

摘要

Considerable progress has been achieved in recent years in developing high quality semiconductor QWR and QD structures using OMCVD growth on nonplanar substrates. These structures are particularly useful for applications in optoelectronic devices because of the in situ formation of all interfaces and the significant degree of control over the possible configurations allowed by the fabrication process. Several applications of these structures have already been demonstrated, particularly good quality QWR LEDs and diode lasers, and new exciting applications, particularly those relying on single-QDs, appear feasible. The challenge for future work in this area remains in the further perfection of this technology, particularly in reducing localization effects in V-groove QWRs and in controlling the environment of pyramidal QDs, as well as in the demonstration of optoelectronic devices with a clear advantage over traditional QW-based optoelectronics technology.