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And a method of manufacturing the same quantum dot optoelectronic devices that were epitaxial lateral growth at the nanoscale
And a method of manufacturing the same quantum dot optoelectronic devices that were epitaxial lateral growth at the nanoscale
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机译:以及制造相同的量子点光电器件的方法,该器件在纳米尺度上是外延横向生长的
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摘要
Optoelectronic devices are provided that incorporate quantum dots as the electroluminescent layer in an inorganic wide-bandgap heterostructure. The quantum dots serve as the optically active component of the device and, in multilayer quantum dot embodiments, facilitate nanoscale epitaxial lateral overgrowth (NELOG) in heterostructures having non-lattice matched substrates. The quantum dots in such devices will be electrically pumped and exhibit electroluminescence, as opposed to being optically pumped and exhibiting photoluminescence. There is no inherent "Stokes loss" in electroluminescence thus the devices of the present invention have potentially higher efficiency than optically pumped quantum dot devices. Devices resulting from the present invention are capable of providing deep green visible light, as well as, any other color in the visible spectrum, including white light by blending different sizes and compositions of the dots and controlling manufacturing processes.
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