EFFECT OF HIGH TEMPERATURE-PRESSURE ON STRAIN RELAXATION IN THIN LAYERS OF SEMICONDUCTORS EPITAXIALLY GROWN ON GAAS AND SI SUBSTRATES

摘要

The effect of thermal treatment (up to 1270 K) under hydrostatic argon pressure (up to 1.2 GPa) on strain relaxation in thin InAs, GaAs and AlGaAs layers grown on GaAs is investigated by X-ray diffraction and related methods. The treatment of these structures results in specific changes to their strain state and to the dislocation density at the layer/substrate interface, depending on the bulk moduli of the layer and substrate and other features of those structures. Annealing the samples un- der enhanced hydrostatic pressure can modulate the primary strain state of the layers. Some applications of the high pressure treatment are suggested.