首页> 外文会议>Nanotechnology Materials and Devices Conference, 2006 IEEE >Near-field measurement of quantum dot broad area laser diodes by utilizing near-field scanning optical microscope: Effects of the linewidth enhancement factor on filamentation
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Near-field measurement of quantum dot broad area laser diodes by utilizing near-field scanning optical microscope: Effects of the linewidth enhancement factor on filamentation

机译:利用近场扫描光学显微镜对量子点广域激光二极管进行近场测量:线宽增强因子对细丝化的影响

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摘要

Near-field scanning optical microscopy (NSOM) studies of road area laser diodes (BALD) with different structures of quantum dot (QD) and quantum well (QW) were performed. The values of plusmn-factor for the two types of BALD were measured as 0.6 (QD) and
机译:对具有不同量子点(QD)和量子阱(QW)结构的道路区域激光二极管(BALD)进行了近场扫描光学显微镜(NSOM)研究。两种类型的BALD的正值系数值分别为0.6(QD)和

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