Design and implementation of 32nm FINFET based 4×4 SRAM cell array using 1-bit 6T SRAM

摘要

A Static Random Access Memory (SRAM) is designed to plug two needs: i) The SRAM provides as cache memory, communicating between central processing unit and Dynamic Random Access Memory (DRAM). ii) The SRAM technology act as driving force for low power application since SRAM is portable compared to DRAM, and SRAM doesn''t require any refresh current. In this paper, we''ve illustrated the design and implementation of FINFET based 4×4 SRAM cell array by means of one bit 6T SRAM. It has been carried out by FINFET HSPICE modeling with read and write operation of SRAM memory.