Contact metal effects in indium phosphide nanowire transistor

摘要

We have investigated electrical properties of indium phosphide nanowire field effect transistors with four different types of metal electrodes (Cr, Ti, Au, and Pt). The nanowires with a width of 50 nm were undoped and grown by metal-organic chemical vapor deposition. Among the four types of metal electrodes, Cr/InP and Ti/InP showed ambipolar conduction, while Pt/InP and Au/InP exhibited p-type conduction. Extracted Schottky barrier heights suggest that barrier heights do not vary linearly with respect to the metal workfunction. Although the Pt/InP features the smallest barrier height, the Au/InP showed the highest drain current at a given gate bias.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.