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MANUFACTURING METHOD OF INDIUM NITRIDE NANOWIRE COVERED WITH INDIUM PHOSPHIDE
MANUFACTURING METHOD OF INDIUM NITRIDE NANOWIRE COVERED WITH INDIUM PHOSPHIDE
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机译:磷化铟覆盖的氮化铟纳米线的制造方法
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摘要
PROBLEM TO BE SOLVED: To provide a method of manufacturing an indium nitride nanowire which is physically and mechanically protected and stabilized.;SOLUTION: In this method, a mixture of powders of indium oxide, indium, and indium phosphide is heated to 750-850°C in an ammonia gas flow.;COPYRIGHT: (C)2005,JPO&NCIPI
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