Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina AT State University, Greensboro, North Carolina 27401, USA;
Department of Electrical and Computer Engineering, North Carolina AT State University, Greensboro, North Carolina 27411, USA;
Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina AT State University, Greensboro, North Carolina 27401, USA,Department of Electrical and Computer Engineering, North Carolina AT State University, Greensboro, North Carolina 27411, USA;
机译:纳米尺度生长中选择性外延的各向异性:通过分子束外延选择性生长在SiO_2图案(001)衬底上的GaAs纳米线
机译:(111)B图案化衬底上GaAs六角形纳米线网络的选择性分子束外延生长
机译:生长参数对分子束外延生长外延GaAs纳米线的形貌和微观结构的影响
机译:分子束外延对加工和生长条件对GaAs纳米线的图案化的影响
机译:纳米图形GaAs量子阱中的人造石墨烯和分子束外延生长石墨烯。
机译:通过Au辅助分子束外延生长后的GaAs(111)纳米线和Si(111)衬底之间的晶格参数调节
机译:GaAs纳米线在非平面(001)和(111)B衬底上生长的选择性分子束外延生长动力学和理论模型