首页> 外文会议>Nano Science and Technology Institute(NSTI) Nanotechnology Conference and Trade Show(NSTI Nanotech 2006) vol.3 >Comparison of Three Region Multiple Gate Nanoscale Structures for Reduced Short Channel Effects and High Device Reliability
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Comparison of Three Region Multiple Gate Nanoscale Structures for Reduced Short Channel Effects and High Device Reliability

机译:降低短沟道效应和高器件可靠性的三区域多栅极纳米尺度结构的比较

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摘要

New structures which have three gate materials in the gate region and an asymmetric or symmetric stack in the oxide region have been modeled. The 2-D model for surface potential and electric field distribution for the channel region has been derived, using universal depletion width boundary conditions. Comparison of various parameters of previously proposed models with the new structures is carried out. Verification of the new three region model is done by using simulator: ATLAS. A unified model for already existent MOSFETs is provided in addition to the new proposed structure for reduced short channel effects and high device reliability.
机译:已经对具有在栅极区域中的三种栅极材料和在氧化物区域中的不对称或对称堆叠的新结构进行了建模。使用通用耗尽宽度边界条件,得出了沟道区域表面电势和电场分布的二维模型。进行了先前提出的模型与新结构的各种参数的比较。使用模拟器ATLAS对新的三区域模型进行验证。除了新提出的结构之外,还提供了针对已经存在的MOSFET的统一模型,以减少短沟道效应并提高器件可靠性。

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