Analytical modeling and simulation of a linearly graded binary metal alloy gate nanoscale cylindrical MOSFET for reduced short channel effects

摘要

In the present era of miniaturization and low power devices, the approach of cylindrical gate MOS structure is in vogue among the researchers for enhancing the performance of nanoscale MOSFETs due to the inherent advantage of the cylindrical geometry compared to the conventional planar structures. In this work, for the first time, the innovative concept of work function engineering by the continuous horizontal variation of mole fraction in a binary metal alloy gate has been incorporated in a cylindrical MOS and a new structure, the work function engineered gate cylindrical gate MOSFET (WFEG CG MOSFET) has been proposed. A detailed analytical modeling of this novel WFEG CG MOS structure has been presented based on the solution of two dimensional Poisson's equation in cylindrical coordinates. An overall performance comparison of the WFEG CG MOS and normal CG MOSFET has been investigated to establish the superiority of the proposed WFEG structure over its normal CG counterpart in terms of increased immunity against short channel effects, reduced value of drain induced barrier lowering and enhanced current driving capability. The results of our analytical modeling are found to be in good agreement with the simulation results, thereby establishing the accuracy of our modeling.