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Spectroscopy for Reducing Extreme Ultraviolet Lithography Mask Blank Defects

机译：减少极端紫外线光刻掩模空白缺陷的光谱学

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《Microscopy Society of America Annual Meeting;Microanalysis Society Annual meeting;International Metallographic Society Annual meeting》|2012年|403-404|共2页
会议地点 Phoenix, AZ(US)
作者
Jenah Harris-Jones;
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作者单位

SEMATECH Inc. 257 Fuller Road Suite 2200 Albany NY 12203;

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1. Influence of shield roughness on Mo/Si defect density for extreme ultraviolet lithography mask blanks [J] . Junichi Kageyama, Mamoru Yoshimoto, Akifumi Matsuda, Research reports of Asahi Glass Co.,Ltd. . 2014,第期

机译：极紫外光刻掩模坯料的屏蔽粗糙度对Mo / Si缺陷密度的影响
2. Influence of shield roughness on Mo/Si defect density for extreme ultraviolet lithography mask blanks [J] . Kageyama Junichi, Yoshimoto Mamoru, Matsuda Akifumi, Journal of Vacuum Science & Technology . 2013,第4期

机译：极紫外光刻掩模坯料的屏蔽粗糙度对Mo / Si缺陷密度的影响
3. At-wavelength inspection of sub-40 nm defects in extreme ultraviolet lithography mask blank by photoemission electron microscopy [J] . Jingquan Lin, Nils Weber, Jochen Maul, Optics Letters . 2007,第13期

机译：通过光发射电子显微镜在波长范围内检查极紫外光刻掩模坯料中的40 nm以下缺陷
4. Characterization of Defect Detection Sensitivity in Inspection of Mask Substrates and Blanks for Extreme Ultraviolet Lithography [C] . Edita Tejnil, Eric Gullikson, Alan Stivers 24th Annual BACUS Symposium on Photomask Technology pt.2 . 2004

机译：极紫外光刻技术中掩模基板和空白检测中缺陷检测灵敏度的表征
5. Local area mask patterning of extreme ultraviolet lithography reticles for native defect analysis [D] . Lyons, Adam 2013

机译：用于自然缺陷分析的极紫外光刻掩模版的局部掩模图案
6. Towards High Accuracy Reflectometry for Extreme-Ultraviolet Lithography [O] . Charles Tarrio, Steven Grantham, Matthew B. Squires, 2003

机译：迈向极紫外光刻的高精度反射计
7. Repair of phase defects in extreme-ultraviolet lithography mask blanks [O] . Stefan P. Hau-Riege, Anton Barty, Paul B. Mirkarimi, 2004

机译：极端紫外线光刻掩模坯料中相缺陷的修复

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