CNTFET Modelling for Electronic Circuit Design

摘要

In this paper we present a model of Carbon Nanotube Field EffectrnTransistor (CNTFET) to be used for electronic circuit design.rnThe model, with a classical behaviour (MOSFET-like CNTFET), isrnbased on analytical approximations and parameters extracted fromrnquantum mechanical simulations of the device to avoid the resort tornself-consistency.rnThe proposed algorithm has been implemented, considering therncontribution to the conduction from the first three sub-bands, and thernresults have been compared with those of the numerical model onlinernavailable, showing a relative error less than 5%.rnIn order to demonstrate its versatility, the model has been employed torndesign basic logic gates.