首页> 外文会议>Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on >Wafer-level high density integration of surface mount technology components in through-silicon trenches
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Wafer-level high density integration of surface mount technology components in through-silicon trenches

机译:晶圆级高密度集成的表面安装技术组件穿过硅沟槽

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摘要

This paper reports a novel method to deliver and assemble standard 01005 format (0.016” × 0.008”, 0.4 mm × 0.2 mm) monolithic ceramic capacitors and thin-film resistors into through-wafer trenches, with a batch assembly process that can guarantee 100% assembly. This process is CMOS compatible and is competitive with capacitors and resistors fabricated through standard foundry processes.
机译:本文报道了一种将标准01005格式(0.016“×0.008”,0.4 mm×0.2 mm)的单片陶瓷电容器和薄膜电阻器交付并组装到晶片沟槽中的新颖方法,其分批组装工艺可以保证100%部件。该工艺与CMOS兼容,并且与通过标准铸造工艺制造的电容器和电阻器相比具有竞争力。

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