Study of a nanohole structure in AlGaInP-based light emitting diodes

摘要

Nanostructure has been widely used in electronic and optoelectronic devices,and it has also been studied as photonic crystals, an antireflection structure, and nano-textures for higher luminescent light emitting diodes (LEDs). In this paper, we reported a nanohole structure on GaP window layer in AlGaInP-based LEDs by using self-assemble metal nanomask and inductively coupled plasma (ICP). This technique has a potential advantage because both the size and density of the nanoholes are controllable. The density of nanoholes decreased from 5×108 to 2.8×108 cm-2 and size varied from 180-430 nm while increasing rapid thermal annealing(RTA) temperature from 350-500℃. Surface morphology of samples annealing at a fixed temperature but different time was also discussed, and it was found that RTA time has little effect on density of nanoholes when the metal layer was annealed at a given temperature. By using this nanohole structure on GaP window layer, the light intensity and light output power of AlGaInP-based LEDs increased 27% and 15%, respectively.