Improvement in luminescence properties of TlInGaAsN/TlInP multi-layers grown by gas source molecular beam epitaxy

摘要

TlInGaAsN/TlInP/InP hetero-structures were studied for the application to the temperature insensitive wavelength laser diodes. By the introduction of N, the incorporation of Tl was increased, but optical properties were degraded. In order to solve this problem, TlInGaAsN/TlInP multiple layer structures with thin TlInGaAsN layer was proposed and the improvement in optical properties was confirmed.