Uniaxial-Biaxial Stress Hybridization For Super-Critical Strained-Si Directly On Insulator (SC-SSOI) PMOS With Different Channel Orientations

摘要

This paper describes the novel stress engineering of SC-SSOI devices through the interactions between biaxial lattice strain, uniaxial relaxation, process-induced stressor and channel orientation. We have demonstrated a method of uniaxial stress relaxation with compressive capping layer (cESL) to achieve the desired stress configurations for enhanced short-channel SC-SSOI pMOS devices.