Based on the theories of strain tensor,the E-k relation for conduction band in uniaxial strained Si(101) materials was established by Schr?dinger equation. And then the model of electronic conductivity effective mass along arbitrary crystal direction in uniaxial-strained Si(101)is obtained. According to results,(101)uniaxial Stress causes six degrees of degeneracy of valley near the bottom of the conduction band splitting into two groups of discrete energy valley;electronic conductivity effective masses obviously decreases along 45o direction but increases along 0oand 90odirections,with increasing(101)uniaxial tensile stress;electronic conductivity effective masse of Si material along highly symmetric directions obviously increases or almost remains unchanged,with increasing(101) uniaxial press stress. The above results can provide valuable references for the study on strain Si material and the conduction channel design related to stress and orientation in the Si-based strain nMOSFETs.%由SchrÖdinger方程出发,基于(101)单轴应力下Si材料导带E-k解析模型,重点研究沿任意晶向(101)单轴应力对Si材料电子电导率有效质量的影响。结果表明：(101)单轴应力沿0º和45º晶向均导致导带底附近的六度简并能谷分裂成两组分立的能谷；(101)单轴张应力下,沿45º晶向的电子电导率有效质量随应力增大而明显减小,沿0º和90º晶向的电子电导率有效质量随应力增大而明显增大；(101)单轴压应力下,Si材料沿高对称晶向的电子电导率有效质量随应力增大而明显增大或几乎不变。
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