Analysis and 2D analytical modeling of III–V Schottky barrier Double-Gate MOSFETs

摘要

In this paper we present a model for III-V Schottky barrier (Double-Gate) MOSFET devices including two-dimensional effects on the main current transport mechanisms. A detailed way of the two-dimensional modeling approach with the primary current components is given. A comparison and verification with TCAD FEM simulation data is done with the model current equations.