2D analytical calculation of the electrostatic potential in lightly doped Schottky barrier Double-Gate MOSFET

摘要

In this paper we present a new way to calculate the electrostatic potential of Schottky barrier Double-Gate MOSFETs (SB-DG-MOSFET) in subthreshold region. Compared to the most existing models, our model does not introduce any kind of fitting parameters, all parameters depend on geometry and boundary conditions. This is beneficial for its advantage application in circuit simulations. We solve 2D Poisson equation in an analytical closed-form with the conformal mapping technique. The model is compared with data simulated by TCAD Sentaurus for channel lengths down to 22 nm and is in good agreement to this simulation results.