Analysis and Performance Study of III–V Schottky Barrier Double-Gate MOSFETs Using a 2-D Analytical Model

摘要

A comprehensive study and comparison of IV and III–V Schottky barrier (SB) double-gate MOSFETs using a universal analytical model and Synopsys TCAD Sentaurus is presented. Various impacts on the device performance have been identified, e.g., the SB height, the bandgap, the material-dependent carrier masses, and density-of-states affecting the ambipolar behavior and ON-current. The performance is analyzed with respect to the most important physical parameters and their impact on the device figure of merit. Ambipolar behavior is an important factor and must be carefully considered in the device design to aim a high ratio and comparable subthreshold slope to conventional MOSFET devices to benefit from the SB. This paper shows that the above listed parameters determine the bottleneck on the device performance.