X-band MMIC broadband low-noise amplifiers based on 0.15 #x03BC;m GaAs pHEMT technology

摘要

The design and fabrication of 2- and 3-stage X-band MMIC broadband low-noise amplifiers (LNA’s) based on 0.15 μm GaAs pHEMT technology is presented. The design and fabrication of 2- and 3-stage X-band MMIC broadband LNA’s is described. LNA’s are designed with using “visual” design CAD tools. MMIC’s are implemented with 0.15 μm pHEMT GaAs technology. The measured scattering parameters and noise figure are presented. Amplifiers cover frequency range from 3 GHz to 14 GHz with the gain of 20…21 dB and 27…29 dB, correspondingly. MMIC LNA’s can be used as building blocks in different microwave systems.