Low distortion broadband amplifier using GaAs pHEMT devices

摘要

A broadband power amplifier circuit providing wide bandwidth with low distortion. The broadband power amplifier circuit includes a GaAs pHEMT MMIC with two (2) serially coupled cascode amplifiers in a first half of the circuit, two (2) serially coupled cascode amplifiers in a second half of the circuit, a first balun for receiving a single-ended RF or microwave input signal at a circuit input and providing first and second balanced low level signals to the cascode amplifiers of the first and second circuit halves, respectively, and a second balun for receiving first and second balanced high level signals generated by the cascode amplifiers of the first and second circuit halves, respectively, and providing a single-ended amplified broadband output signal with low distortion at a circuit output.