INTERMEDIATE FREQUENCY AMPLIFIER BASED ON GAAS PHEMT PROCESS

摘要

Disclosed is an intermediate frequency amplifier based on a GaAs pHEMT process, the amplifier comprising: an input matching unit, a cascode amplification unit, an output matching unit and a feedback unit, wherein the input matching unit, the cascode amplification unit and the output matching unit are connected to each other in sequence, the feedback unit is arranged between the input matching unit and the output matching unit, and the possibility of resonance far beyond a working band is prevented in a lumped manner. The intermediate frequency amplifier in the present invention can realize a high gain of more than 24 dB in a frequency band of 30 MHz to 200 MHz; absolute stability is achieved across the whole microwave radio frequency band, without adding an extra off-chip stabilizing circuit, such that the layout is simplified; a noise coefficient of less than 1.5 dB is realized in a frequency band of 30 MHz to 200 MHz; and the size is only 1000μm*800μm, such that it is very convenient to integrate same into a system or cascade the same unit.