An ultra‐wideband distributed amplifier MMICs based on 0.15‐um GaAs pHEMT technology

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An ultra‐wideband distributed amplifier MMICs based on 0.15‐um GaAs pHEMT technology

机译：基于0.15um GaAs pHEMT技术的超宽带分布式放大器MMIC

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A DC-30GHz ultra-wideband distributed amplifier based on the 0.15-um GaAs process is proposed and characterized. The distributed amplifier has nine power amplifying units with a cascode structure. The measured results show that the amplifier has 16-dB gain in the frequency range of DC-30GHz. The output power of 1-dB compression point is 19 dBm at 10 GHz, and the saturated output power is 25 dBm. The chip size is 3x 1.2 mm.

机译：提出并表征了基于0.15um GaAs工艺的DC-30GHz超宽带分布式放大器。分布式放大器具有九个具有级联结构的功率放大单元。测量结果表明，该放大器在DC-30GHz的频率范围内具有16dB的增益。 1 dB压缩点的输出功率在10 GHz下为19 dBm，饱和输出功率为25 dBm。芯片尺寸为3x 1.2毫米。

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来源
《International journal of numerical modelling》 |2020年第3期|e2605.1-e2605.6|共6页
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Univ Elect Sci & Technol China Sch Elect Sci & Engn Chengdu Peoples R China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
distributed amplifier; GaAs MMIC; power amplifier; ultra-wideband;

机译：分布式放大器砷化镓功率放大器;超宽带;

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专利

1. A Wideband Extended-Dynamic-Range Successive Detection Logarithmic Amplifier Based on 0.15μm GaAs pHEMT Technology [J] . Javadifar Nader, Dousti Massoud, Haighassem Hassan Journal of circuits, systems and computers . 2019,第4期

机译：基于0.15μmGaAs pHEMT技术的宽带扩展动态范围连续检测对数放大器
2. A Ka-band low-noise amplifier with a coplanar waveguide (CPW) structure with 0.15-um GaAs pHEMT technology [J] . Wu Chia-Song, Chang Chien-Huang, Liu Hsing-Chung, Journal of Semiconductors . 2010,第1期

机译：具有共面波导（CPW）结构和0.15um GaAs pHEMT技术的Ka波段低噪声放大器
3. A Ka-band low-noise amplifier with a coplanar waveguide (CPW) structure with 0.15-um GaAs pHEMT technology [J] . Wu Chia-Song, Chang Chien-Huang, Liu Hsing-Chung, Journal of Semiconductors . 2010,第1期

机译：具有共面波导（CPW）结构和0.15um GaAs pHEMT技术的Ka波段低噪声放大器
4. V-band power amplifier MMICs exhibiting low power slump characteristics utilizing a production released 0.15-um GaAs PHEMT process [C] . Campbell, C.F., Moochalla, S., Daugherty, D., IEEE MTT-S International Microwave Symposium Digest;IMS 2009 . 2009

机译：利用已发布的0.15um GaAs PHEMT工艺生产的V波段功率放大器MMIC具有低功耗下降特性
5. A 40 GHz Power Amplifier Using a Low Cost High Volume 0.15 um Optical Lithography pHEMT Process. [D] . Mays, Kenneth W. 2012

机译：采用低成本大体积0.15 um光学光刻pHEMT工艺的40 GHz功率放大器。
6. n+ GaAs/AuGeNi-Au Thermocouple-Type RF MEMS Power Sensors Based on Dual Thermal Flow Paths in GaAs MMIC [O] . Zhiqiang Zhang, Xiaoping Liao 2017

机译：基于GaAs MMIC中双热流路径的n + GaAs / AuGeNi-Au热电偶型RF MEMS功率传感器
7. Compact and broadband microstrip power amplifier MMIC with 400-mW output power using0.15-µm GaAs PHEMTs [O] . Bessemoulin A., Mahon S., Dadello Anna, 2005

机译：紧凑型宽带微带功率放大器MMIC，采用0.15μmGaAs PHEMT的输出功率为400mW
8. GaAs-based JFET and PHEMT technologies for ultra-low-power microwave circuits operating at frequencies up to 2.4 GHz [R] . Baca, A. G. , Hietala, V. M. , Greenway, D. , 1998

机译：基于Gaas的JFET和pHEmT技术，适用于工作频率高达2.4 GHz的超低功耗微波电路

An ultra‐wideband distributed amplifier MMICs based on 0.15‐um GaAs pHEMT technology

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