首页> 外文期刊>Journal of circuits, systems and computers >A Wideband Extended-Dynamic-Range Successive Detection Logarithmic Amplifier Based on 0.15μm GaAs pHEMT Technology
【24h】

A Wideband Extended-Dynamic-Range Successive Detection Logarithmic Amplifier Based on 0.15μm GaAs pHEMT Technology

机译:基于0.15μmGaAs pHEMT技术的宽带扩展动态范围连续检测对数放大器

获取原文
获取原文并翻译 | 示例

摘要

This paper puts forward an extended-dynamic-range successive detection logarithmic amplifier (SDLA) for K-band (18-26.5 GHz) applications. A novel single-transistor power detection unit (PDU) is used instead of a conventional rectifier to effectively improve the dynamic range-bandwidth product of the amplifier. Circuit analysis and mathematical modeling are performed for the proposed PDU and the SDLA, respectively. Transistor level design is carried out for the whole circuit using 0.15 mu m GaAs pseudomorphic high electron mobility transistor (pHEMT) technology. The SDLA presents a wide dynamic range of 75 dB with a +/- 1.5 dB logarithmic error, over the entire band of interest, and consumes 340 mW from + 2.5 V and -0.8 V power supplies. All requirements are verified in post-layout simulation using ADS software. Thermal simulation and statistical yield analysis are performed to ensure the robustness of the proposed architecture.
机译:本文提出了一种适用于K波段(18-26.5 GHz)应用的扩展动态范围连续检测对数放大器(SDLA)。使用新颖的单晶体管功率检测单元(PDU)代替传统的整流器,可以有效地提高放大器的动态范围带宽积。分别对建议的PDU和SDLA进行电路分析和数学建模。整个电路均采用0.15μmGaAs拟态高电子迁移率晶体管(pHEMT)技术进行晶体管级设计。 SDLA在整个目标频段上提供75 dB的宽动态范围,对数误差为+/- 1.5 dB,并且+2.5 V和-0.8 V电源消耗340 mW。使用ADS软件在布局后仿真中验证了所有要求。进行热仿真和统计产量分析以确保所提出架构的鲁棒性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号