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O-band InAs quantum dot (QD) laser diode with Sb-molecule sprayed Dot-in-Well (DWELL) structures fabricated on GaAs substrates

机译：O-带INAS量子点（QD）激光二极管，SB分子喷涂在GaAs基材上制造的孔（居住）结构

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O-band quantum-dot (QD) laser-diode (LD) has been successfully demonstrated with novel InAs dot-in-well structures employed on GaAs-wafers. Improvement of crystal-qualities and enhancement of electroluminescence-intensities have been brought about to the LD-devices by Sb-molecule around InAs-QDs during molecular-beam-epitaxy.

机译：通过在GaAs-晶片上采用的新型InAs点井结构成功地证明了O频带量子点（QD）激光二极管（LD）。在分子束外延期间，通过SB-Comply将LD-Demance提高了晶体素质和电致发光 - 强度的增强。

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《Opto-Electronics and Communications Conference》|2008年||共2页
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Naokatsu Yamamoto; Kouichi Akahane; Hideyuki Sotobayashi; Masahiro Tsuchiya;
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专利

1. The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures [J] . Liu G.T., Stintz A. IEEE Journal of Quantum Electronics . 2000,第11期

机译：使用InAs-InGaAs阱中点（DWELL）结构的量子阱组成对量子点激光器性能的影响
2. The influence of quantum-well composition on the performance ofquantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures [J] . Liu G.T., Stintz A., Li H., IEEE Journal of Quantum Electronics . 2000,第11期

机译：使用InAs-InGaAs阱中点（DWELL）结构的量子阱组成对量子点激光器性能的影响
3. InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 mu m wavelength range [J] . Maleev NA., Kovsh AR., Sakharov AV., Physica status solidi, B. Basic research . 2001,第3期

机译：在波长范围为1.25-1.33μm的GaAs衬底上的InAs / InGaAs量子点微腔二极管结构
4. O-band InAs quantum dot (QD) laser diode with Sb-molecule sprayed Dot-in-Well (DWELL) structures fabricated on GaAs substrates [C] . Naokatsu Yamamoto, Kouichi Akahane, Hideyuki Sotobayashi, Opto-Electronics and Communications Conference . 2008

机译：O-带INAS量子点（QD）激光二极管，SB分子喷涂在GaAs基材上制造的孔（居住）结构
5. Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates [D] . Frateschi, Newton Cesario 1993

机译：基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
6. Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure [O] . Xiaolong Zhou, Yonghai Chen, Bo Xu 2011

机译：非对称InAs / InGaAs / GaAs孔内结构电子态能级的光学识别
7. The Influence of Quantum-Well Composition on the Performance of Quantum Dot Lasers Using InAs/InGaAs Dots-in-a-Well (DWELL) Structures [O] . G. T. Liu et al. 2000

机译：量子阱组成对使用Inas / InGaas点井（DWELL）结构的量子点激光器性能的影响

O-band InAs quantum dot (QD) laser diode with Sb-molecule sprayed Dot-in-Well (DWELL) structures fabricated on GaAs substrates

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