The Two Dimensional Electron Gas in BST/Al_(0.3)Ga_(0.7)N/GaN Double Heterostructure

摘要

In this paper, we take account of spontaneous and piezoelectric polarization effect of BST and AlGaN. At the hetero-interface in BST/Al_(0.3)Ga_(0.7)N/GaN double heterostructure, one-dimensional Poisson-Schrodinger equation using nonuniform mesh are solved self-consistently in dependence of the polarization and thickness of BST and the thickness of AlGaN barrier layer. BST/Al_(0.3)Ga_(0.7)N/GaN double heterostructure conduction band and the two-dimensional electron gas(2DEG) density are investigated. The results indicate that the 2DEG density of BST/Al_(0.3)Ga_(0.7)N/GaN is larger than that of Al_(0.3)Ga_(0.7)N/GaN, for a 8nm BST on AlGaN/GaN structure, the 2DEG density reached 1.85×10~(13)cm~(-2), which is 23% higher than that of AlGaN/GaN structure.