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THz Spectroscopy of Surface States in 3D Topological Insulators based on Strained High Mobility HgTe Films

机译:基于应变高迁移率HGTE薄膜的3D拓扑绝缘子中表面状态的光谱学

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Applying terahertz photogalvanic spectroscopy we demonstrate that topological surface states in strained mercury telluride films prevails even for such large thickness as 200 nm. We show that THz radiation give rise to cyclotron resonance assisted photocurrents in top and bottom surface of (001) and (013)-grown 3D TI.
机译:施用太赫兹光致抗血抗透视我们证明,即使对于这种大的厚度为200nm,颗粒状碲化肽薄膜中的拓扑表面状态也是如此。我们表明,在(001)和(013) - 填充3D Ti的顶表面和底表面中,THz辐射产生回旋谐振辅助光电流。

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