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THz Spectroscopy of Surface States in 3D Topological Insulators based on Strained High Mobility HgTe Films

机译:基于应变高迁移率HgTe膜的3D拓扑绝缘子的表面状态THz光谱

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Applying terahertz photogalvanic spectroscopy we demonstrate that topological surface states in strained mercury telluride films prevails even for such large thickness as 200 nm. We show that THz radiation give rise to cyclotron resonance assisted photocurrents in top and bottom surface of (001) and (013)-grown 3D TI.
机译:应用太赫兹光电流光谱法,我们证明了即使在200 nm这样大的厚度下,应变碲化汞薄膜中的拓扑表面状态仍然占优势。我们显示太赫兹辐射在(001)和(013)生长的3D TI的顶部和底部表面产生回旋共振辅助光电流。

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