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机译:基于应变高迁移率HgTe膜的三维拓扑绝缘子表面状态中的回旋共振辅助光电流
Terahertz Center, University of Regensburg, 93040 Regensburg, Germany;
A. V. Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia,Novosibirsk State University, Novosibirsk 630090, Russia;
Terahertz Center, University of Regensburg, 93040 Regensburg, Germany;
Terahertz Center, University of Regensburg, 93040 Regensburg, Germany;
Terahertz Center, University of Regensburg, 93040 Regensburg, Germany;
Terahertz Center, University of Regensburg, 93040 Regensburg, Germany;
Ioffe Institute, 194021 St. Petersburg, Russia;
Ioffe Institute, 194021 St. Petersburg, Russia,St. Petersburg State Polytechnic University, 195251 St. Petersburg, Russia;
Ioffe Institute, 194021 St. Petersburg, Russia;
A. V. Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia,Novosibirsk State University, Novosibirsk 630090, Russia;
A. V. Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia;
A. V. Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia;
Terahertz Center, University of Regensburg, 93040 Regensburg, Germany;
Paul-Drude-Institut for Solid State Electronics, 10117 Berlin, Germany;
Terahertz Center, University of Regensburg, 93040 Regensburg, Germany;
quantum wells; optical creation of spin polarized carriers; quantum wells; quantum wells;
机译:基于紧张HGTE膜的高迁移率3D拓扑绝缘子的太赫兹光致抗蚀性
机译:基于应变高迁移率HgTe膜的3D拓扑绝缘子的传输特性
机译:基于高迁移率HgTe薄膜的三维拓扑绝缘体中的弱抗局部化
机译:基于应变HgTe膜的3D拓扑绝缘子中的回旋共振辅助光电流
机译:探测拓扑绝缘体薄膜和拓扑绝缘体/铁磁体(TI / FM)异质结构表面状态的磁传输方法。
机译:三维拓扑绝缘体Bi2Se3表面的超快光电流
机译:基于应变高迁移率HgTe膜的三维拓扑绝缘子表面状态中的回旋共振辅助光电流