Impact of Source-to-Channel Carrier Injection Properties on Device Performance of Sub-100nm Metal Source/Drain Ge-pMOSFETs

摘要

Sub-100nm metal source/drain (MSD) Ge-pMOSFETs are successfully fabricated and the device performance is analyzed from the aspect of source-to-channel carrier injection properties. Our full-band based device simulator is able to reproduce the experimental device characteristics, revealing that the low source-to-channel injected carrier density (N{sub}s) of MSD Ge-devices could limit their source-drain current. In deep sub-100nm region, the quasi-ballistic transport nature tends to reduce the carrier velocity advantage of Ge to Si, while Ge-devices rather exhibit higher drain current than Si-ones with sufficiently high N{sub}s condition. This N{sub}s increase is a key to develop high-performance Ge-pMOSFETs.