Effect on Resistive Switching by Inserting TiO_x Thin Layer in SiO_x: Ag-Based Memristor

摘要

An approach to design a memristor by inserting a TiO_x thin layer in Pt-Ag/SiO_x:Ag/TiOx/P~(++)-Si memristor in order to exhibit analog resistive switching has been proposed. The device shows continuous resistance change under positive and negative DC sweeping bias, and the device conductance can also be modulated by consecutive potentiating and depressing pulse programming. These primitive results are beneficial to realize the learning and computing in such kind of memristor devices. High-resolution transmission electron microscopy observations demonstrate a clear interface between the thin layers of Ag nano-clusters embedded SiOx and the amorphous TiOx. The I-V analysis of Pt-Ag/SiO_x:Ag/TiO_x/P~(++)-Si memristor confirms that the presence of TiO_x thin layer controls the formation/rupture of Ag-filament across the Pt-Ag and P~(++)-Si electrodes, realizing the gradual conductance modulation, which is essential to emulate the bio-synaptic characteristics.