GeSn alloys are group IV semiconductors that have attracted remarkable interest owing to their ability of strain and bandgap engineering by controlling the Sn content, their compatibility with the Si CMOS platform and their tunable and direct band gap. These material properties make GeSn a promising candidate for many electronic and optoelectronic applications including among others tunnel field effect transistors, infrared (IR) photodectors, and IR emitters. However, in order to produce high quality GeSn devices to enable these applications, it is of paramount importance to develop ohmic metal contacts with very low specific contact resistivity on both n-type and p-type doped GeSn layers used in these devices. This could be achieved by realizing high doping levels and attaining low intrinsic barrier heights between the metal and the contacted GeSn layer.
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