首页> 外国专利> Electromagnetic radiation detecting device, has electrically conducting contact comprising P-type area that allows passage of charges between conducting bump and P-type semiconductor substrate, and N-type area arranged in contact with bump

Electromagnetic radiation detecting device, has electrically conducting contact comprising P-type area that allows passage of charges between conducting bump and P-type semiconductor substrate, and N-type area arranged in contact with bump

机译:电磁辐射检测装置具有导电触点,该导电触点包括允许电荷在导电凸块和P型半导体衬底之间通过的P型区域以及与凸块接触设置的N型区域

摘要

The device has an electrically conducting contact arranged between two photodetectors (1) e.g. PN or NP type photodiodes, in an alignment of an organization axis (X). The contact has an electrically conducting bump that is arranged on a P-type semiconductor substrate (6) and connected to a bias voltage generator (3) to apply bias voltage (V-SUB) to the substrate. The contact comprises a P-type area that allows passage of electric charges between the bump and the substrate, and an N-type area arranged in contact with the bump. The N-type area forms a ring around the P-type area. A metallic line connects each photodetector with a reading circuit (4) such as direct injection, buffered direct injection or capacitive trans-impedance amplifier circuit. An independent claim is also included for a method for fabricating a detection matrix.
机译:该装置具有布置在两个光电检测器(1)之间的导电触点,例如两个光电检测器(1)。 PN或NP型光电二极管,沿组织轴(X)对齐。触点具有导电凸块,该导电凸块布置在P型半导体衬底(6)上并连接到偏置电压发生器(3),以向衬底施加偏置电压(V-SUB)。接触件包括允许电荷在凸块和基板之间通过的P型区域,以及与凸块接触布置的N型区域。 N型区域在P型区域周围形成一个环。金属线将每个光检测器与读取电路(4)连接,例如直接注入,缓冲直接注入或电容跨阻放大器电路。还包括用于制造检测矩阵的方法的独立权利要求。

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