Evaluation of Silicon Nitride Film Formed by Atomic Layer Deposition on the Silicon Substrate with Trench Structure Using Angle-Resolved Hard X-ray Photoelectron Spectroscopy

摘要

As a packing density in the large-scale integration (LSI) becomes higher, the devices exhibit three-dimensional complicated structure. The deep trench with high aspect ratio (AR), i.e. opening/depth, is one of the components to realize the structure. The atomic layer deposition (ALD) is one of techniques suitable for trench structure, because which can conformally deposit a thin film along the high AR trench structure. The ALD film theoretically consist of the same composition with the same thickness along the trench no matter how the AR is high. In this study, we evaluated the ALD deposited SiN films along the deep trench with high AR of 3 and 7.5.